Authors: Rajiv Ramanujam Prabhakar, Sudhanshu Shukla, Haoyi Li, R. Soyoung Kim, Wei Chen, Jérôme Beaudelot, Jan D’Haen, Daniely Reis Santos, Philippe M. Vereecken, Gian-Marco Rignanese, Ethan J. Crumlin, Junko Yano, Bart Vermang, and Joel W. Ager
Abstract
Photoelectrochemical (PEC) CO2 reduction (CO2R) on semiconductors provides a promising route to convert CO2 to fuels and chemicals. However, most semiconductors are not stable under CO2R conditions in aqueous media and require additional protection layers for long-term durability. To identify materials that would be stable and yield CO2R products in aqueous conditions, we investigated bare Cu(In,Ga)S2 (CIGS) thin films. We synthesized CIGS thin films by sulfurizing a sputtered Cu–In–Ga metal stack. The as-synthesized CIGS thin films are Cu-deficient and have a high enough bandgap (1.7 eV) suitable to perform CO2R. The bare CIGS photocathodes had faradaic yields of 14% for HCOO− and 30% for CO in 0.1 M KHCO3 electrolyte without the use of any co-catalysts under 1 sun illumination at an applied bias of −0.4 V vs. RHE and operated stably for 80 min. Operando Raman spectroscopy under CO2R conditions showed that the dominant A1 mode of CIGS was unaffected during operation. Post-mortem X-ray photoelectron spectroscopy (XPS) and X-ray absorption spectroscopy (XAS) analysis suggests that the CO2R stability could be related to self-protection caused by the in situ formation of oxides/hydroxides of Ga and In during operation. Density functional theory (DFT) calculations also reveal that Ga and In are the preferential sites for the adsorption of CO2R products, particularly HCOO−. These results show that CIGS is a promising semiconductor material for performing direct semiconductor/electrolyte reactions in aqueous media for the PEC CO2R.
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